Power mosfets manufacturing method

ABSTRACT

Present application provides a method of manufacturing a semiconductor structure, including forming a well, forming a gate electrode over the well, implanting a lightly doped region in a first side of the well, implanting a first drain in the lightly doped region by a first depth, implanting a second drain in the lightly doped region by a second depth, implanting a source in a second side of the well, the second side being opposite to the first side. The second depth is greater than the first depth. The gate electrode is formed to cover a part of the lightly doped region and a part of the first drain.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of prior-filed application Ser. No. 15/013,747, filed Feb. 2, 2016, under 35 U.S.C. 120.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experienced rapid growth. Technological advances in IC materials and design have produced generations of ICs where each generation has smaller and more complex circuits than the previous generation. However, these advances have increased the complexity of processing and manufacturing ICs and, for these advances to be realized, similar developments in IC processing and manufacturing are needed. In the course of integrated circuit evolution, functional density (i.e., the number of interconnected devices per chip area) has generally increased while geometry size (i.e., the smallest component (or line) that can be created using a fabrication process) has decreased.

ICs may contain transistor devices that have doped regions. As transistor sizes continue to shrink, it is more difficult to prevent undesirable out-diffusion of the doped regions. Such out-diffusion may interfere with transistor device operation and/or degrade transistor performance. In addition, the shrinking transistor sizes may lead to problems such as current crowding, high source/drain resistance, and non-optimal doping profile.

BRIEF DESCRIPTION OF THE DRAWINGS

The details of one or more embodiments of the disclosure are set forth in the accompanying drawings and the description below. Other features and advantages of the disclosure will be apparent from the description, drawings and claims.

FIG. 1 is a schematic diagram of a MOSFET, in accordance with some embodiments.

FIGS. 2A-2E illustrate a process of manufacturing a MOSFET, in accordance with some embodiments.

Like reference symbols in the various drawings indicate like elements.

DETAILED DESCRIPTION

The making and using of the embodiments of the disclosure are discussed in detail below. It should be appreciated, however, that the embodiments provide many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are illustrative, and do not limit the scope of the disclosure.

It will be understood that when an element or layer is referred to as being “on,” “connected to” or “coupled to” another element or layer, it can be directly on, or connected or coupled to the other element or layer or intervening elements or layers may be present. In contrast, when an element is referred to as being “directly on,” “directly connected to” or “directly coupled to” another element or layer, there are no intervening elements or layers present.

It will be understood that, although the terms first, second, third etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present inventive concept.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as “below” or “beneath” other elements or features would then be oriented “above” the other elements or features. Thus, the exemplary term “above” or “below” can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the present inventive concept. As used herein, the singular forms “a,” “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises” and/or “comprising,”—when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.

Reference throughout this specification to “one embodiment” or “an embodiment” means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment. Thus, the appearances of the phrases “in one embodiment” or “in an embodiment” in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. It should be appreciated that the following figures are not drawn to scale; rather, these figures are merely intended for illustration.

FIG. 1 is a metal-oxide-semiconductor field-effect transistor (MOSFET) 1 in accordance with one embodiment of the present disclosure. The MOSFET includes a substrate 10, a lightly doped region 11, a drain region 12, a source region 13, a gate electrode 14 and a dielectric layer 15.

The substrate 10 may be a p type doped substrate, or an n type doped substrate, which means that the semiconductor substrate 10 may be doped with either n type or p type impurities. The substrate 10 is formed from silicon, gallium arsenide, silicon germanium, silicon carbon, or other known semiconductor materials used in semiconductor device processing. Although a semiconductor substrate is used in the illustrated examples presented herein, in other alternative embodiments, epitaxially grown semiconductor materials or silicon on insulator (SOI) layers may be used as the substrate 10. In other embodiments, the substrate 10 may be a well region.

It is known in the art that dopant impurities can be implanted into a semiconductor material to form a p type or an n type material. A p type material may be further classified as p++, p+, p, p−, p−−, type materials, depending on the concentration of the dopant. If a material is stated to be a p type material, it is doped with p type impurities and it may be any of the p++, p+, p, p−, p−−, type materials. Similarly, an n type material may be further classified as n++, n+, n, n−, n−− type materials. If a material is stated to be an n type material, it is doped with n type impurities and it may be any of the n++, n+, n, n−, n−− type materials. Dopant atoms for p type materials include boron, for example. In n type materials, dopant atoms include phosphorous, arsenic, and antimony, for example. Doping may be done through ion implantation processes. When coupled with photolithographic processes, doping may be performed in selected areas by implanting atoms into exposed regions while other areas are masked. Also, thermal drive or anneal cycles may be used to use thermal diffusion to expand or extend a previously doped region. As alternatives, some epitaxial deposition of semiconductor materials allows for in-situ doping during the epitaxial processes. It is common knowledge that implantation can be done through certain materials, such as thin oxide layers.

The doping concentration amounts for the well region and the diffusions described may vary with the process used and the particular design. Doping concentrations at a p type material or an n type material may range from 10¹⁴ atoms/cm³ to 10²² atoms/cm³, with a p+/n+ material with concentrations being greater than about 10¹⁸/cm³, for example. Some other ranges of concentrations may be used, such as an n−−/p−− material with a doping concentration less than 10¹⁴ atoms/cm³, an n−/p− material with a doping concentration ranging from 10¹⁴ atoms/cm³ to 10¹⁶ atoms/cm³, an n/p material with a doping concentration ranging from 10¹⁶ atoms/cm³ to 10¹⁸ atoms/cm³, an n+/p+ material with a doping concentration ranging from 10¹⁸ atoms/cm³ to 10²⁰ atoms/cm³, and an n++/p++ material with a doping concentration ranging larger than 10²⁰ atoms/cm³. Further alternative ranges of concentrations may be used, such as an n−−/p−− material with a doping concentration range around 10¹⁵ to 10¹⁸ atoms/cm³, and an n−/p− material with a doping concentration 5 to 100 times heavier than the concentration of an n−−/p−− material.

The lightly doped region 11 of a first conductivity type is formed at one side in the substrate 10. The lightly doped region 11 may be formed by performing an ion implantation process known in the art. In some embodiments, the MOSFET shown in FIG. 1 is an NMOS device, therefore N-type dopants such as phosphorus with energy ranging from about 80 KeV to about 90 KeV may be used to form the lightly doped region 11. In other embodiments, for a PMOS device (not illustrated), P-type dopants such as boron may be used to form the lightly doped region 11.

The drain region 12 of the first conductivity type is within the lightly doped region 11. The drain region 12 may have a drain contact (not shown in the drawing). The drain region 12 comprises a first drain region 12 a and a second drain region 12 b. Both of the first drain region 12 a and the second drain region 12 b are within the lightly doped region 11. The first drain region has a junction depth d1 measured from a top surface of the substrate 10. The second drain region 12 b has a junction depth d2 measured from the top surface of the substrate 10. The junction depth d2 is greater than the junction depth d1. In some embodiments, the junction depth d1 is in a range from about 0.01 μm to about 0.022 μm and the junction depth d2 is in a range from about 0.02 μm to about 0.054 μm. In some embodiments, the first drain region 12 a and the second drain region 12 b are formed of different materials. For example, the first drain region 12 a can be formed of arsenic with energy in a range from about 10 KeV to about 30 KeV and the second drain region 12 b can be formed of phosphorous with energy in a range from about 20 KeV to about 40 KeV.

The source region 13 of the first conductivity type is at another side within the substrate 10. The source region 13 may have a drain contact (not shown in the drawing). The source region 13 comprises a first source region 13 a and a second source region 13 b. The first source region 13 a has a junction depth d3 measured from the top surface of the substrate 10. The second source region 13 b has a junction depth d4 measured from the top surface of the substrate 10. The junction depth d4 is greater than the junction depth d3. In some embodiments, the junction depth d3 is in a range from about 0.01 μm to about 0.022 μm and the junction depth d4 is in a range from about 0.02 μm to about 0.054 μm. In some embodiments, the first source region 13 a and the second source region 13 b are formed of different materials. For example, the first source region 13 a can be formed of arsenic with energy in a range from about 10 KeV to about 30 KeV and the second source region 13 b can be formed of phosphorous with energy in a range from about 20 KeV to about 40 KeV.

The surface 121 of the drain region 12 and the surface 131 of the source region 13 define a channel therebetween. The surface 131 of the source region 13 directly contacts the well region 10. In some embodiments, all surfaces of the source region 13 directly contact the well region 10. Therefore, the source region 13 is not surrounded by the lightly doped region.

The dielectric layer 15 is on the top surface of the substrate 10 and between the drain region 12 and the source region. The dielectric layer 15 covers a part of the lightly doped region 11, a part of the drain region 12 and a part of the source region 13. Therefore, the dielectric layer 15 overlaps with a part of the drain region 12 or a part of the source region. The overlap of the dielectric layer 15 and the drain region 12 or the source region 13 is about 0.3 μm. The dielectric layer 15 may include silicon oxide, silicon nitride, silicon oxynitride, a high-k dielectric material, combinations thereof, or multi-layers thereof. The high-k dielectric material may comprise TiO₂, HfZrO, Ta₂O₃, HfSiO₄, ZrO₂, ZrSiO₂, combinations thereof, or other suitable material. The dielectric layer 15 may have a thickness between about 100 Å and about 2,500 Å, although different thicknesses may be used.

The gate electrode 14 is on the dielectric layer 15. The gate electrode 14 fully covers the dielectric layer 15, and thus the gate electrode 14 overlaps with a part of the drain region 12 or a part of the source region 13. The gate electrode 14 may include a conductive material such as doped polysilicon, a metal, a metal alloy, or the like. A silicide layer (not shown in the drawing) may be formed on the gate electrode by a self-aligned silicide process.

The spacers 16 a, 16 b are on the substrate 10. The spacer 16 a is at one side of the gate electrode 14 and in contact with a coplanar surface defined by lateral surfaces of the gate electrode 14 and the dielectric layer 15. The spacer 16 b is at an opposing side of the gate electrode 14 and in contact with a coplanar surface defined by lateral surfaces of the gate electrode 14 and the dielectric layer 15. The spacers 16 a, 16 b are made of a dielectric material, such as silicon oxide, silicon oxynitride (SiON), or silicon nitride (SiN). In some embodiments, a ratio of the width W1 of the gate electrode 14 to the width W2 of the spacer 16 a or 16 b is in a range from about 4:1 to about 7:1.

In some embodiments, the lightly doped region would be implanted at both side (i.e., the drain side or the source side) of the substrate to prevent the MOSFET from offset gate issue. However, the lightly doped regions of the source side and the drain side might be physically contacted to each other to form an undesired short circuit in the channel of the MOSFET, if the width of the gate electrode is insufficient. To prevent the lightly doped regions from contacting to each other, the gate electrode with a wider width should be used. One of the benefits of the present disclosure is to provide an asymmetric lightly doped profile such that a smaller gate electrode width can be implemented and therefore shrinking the size of the transistor.

In accordance with the embodiments shown in FIG. 1 of the present disclosure, the gate electrode 14 partially overlaps with the drain region 12 or the source region 13 to prevent the MOSFET 1 from offset gate issue. Therefore, it is unnecessary to implant the lightly doped regions at both of the drain side and the source side. As shown in FIG. 1, the lightly doped region 11 is implanted at only the drain side. Therefore, in comparison with the MOSFET with the lightly doped regions at both of the drain side and the source side, the MOSFET 1 shown in FIG. 1 has narrower width of the gate electrode 14. The channel length of a MOSFET is defined by the width of the gate electrode 14, and thus reducing the width of the gate electrode 14 would reduce the channel length of the MOSFET. In some embodiments, the channel of the MOSFET 1 is about 58% to 66% less than that of the conventional MOSFET (for an NMOS), and the channel of the MOSFET 1 is about 60% to 70% less than that of the conventional MOSFET (for a PMOS). Reducing the channel length of a MOSFET would reduce the turn on resistance (Ron) and the gate charge, which would in turn increase the performance of the MOSFET.

FIGS. 2A-2E illustrate, in cross-sectional views, a method of manufacturing a MOSFET, in accordance with some embodiments. The resulting MOSFET may be the MOSFET 1 shown in FIG. 1. Alternative methods may be used to make the MOSFET 1 shown in FIG. 1 or alternative embodiments of the MOSFET.

As illustrated in FIG. 2A, a substrate 20 is provided. An optional n+ Buried Layer (NBL) may be formed in a portion of the substrate 20, (not shown in the drawing). In other embodiments, the subject 20 may be a well region. The substrate 20 may be a p type doped substrate, or an n type doped substrate, which means that the semiconductor substrate 20 may be doped with either n type or p type impurities. The substrate 20 is formed from silicon, gallium arsenide, silicon germanium, silicon carbon, or other known semiconductor materials used in semiconductor device processing. Although a semiconductor substrate is used in the illustrated examples presented herein, in other alternative embodiments, epitaxially grown semiconductor materials or silicon on insulator (SOI) layers may be used as the substrate 20.

It is known in the art that dopant impurities can be implanted into a semiconductor material to form a p type or an n type material. A p type material may be further classified as p++, p+, p, p−, p−−, type materials, depending on the concentration of the dopant. If a material is stated to be a p type material, it is doped with p type impurities and it may be any of the p++, p+, p, p−, p−−, type materials. Similarly, an n type material may be further classified as n++, n+, n, n−, n−− type materials. If a material is stated to be an n type material, it is doped with n type impurities and it may be any of the n++, n+, n, n−, n−− type materials. Dopant atoms for p type materials include boron, for example. In n type materials, dopant atoms include phosphorous, arsenic, and antimony, for example. Doping may be done through ion implantation processes. When coupled with photolithographic processes, doping may be performed in selected areas by implanting atoms into exposed regions while other areas are masked. Also, thermal drive or anneal cycles may be used to use thermal diffusion to expand or extend a previously doped region. As alternatives, some epitaxial deposition of semiconductor materials allows for in-situ doping during the epitaxial processes. It is common knowledge that implantation can be done through certain materials, such as thin oxide layers.

The doping concentration amounts for the well region and the diffusions described may vary with the process used and the particular design. Doping concentrations at a p type material or an n type material may range from 10¹⁴ atoms/cm³ to 10²² atoms/cm³, with a p+/n+ material with concentrations being greater than about 10¹⁸/cm³, for example. Some other ranges of concentrations may be used, such as an n−−/p−− material with a doping concentration less than 10¹⁴ atoms/cm³, an n−/p− material with a doping concentration ranging from 10¹⁴ atoms/cm³ to 10¹⁶ atoms/cm³, an n/p material with a doping concentration ranging from 10¹⁶ atoms/cm³ to 10¹⁸ atoms/cm³, an n+/p+ material with a doping concentration ranging from 10¹⁸ atoms/cm³ to 10²⁰ atoms/cm³, and an n++/p++0 material with a doping concentration ranging larger than 10²⁰ atoms/cm³. Further alternative ranges of concentrations may be used, such as an n−−/p−− material with a doping concentration range around 10¹⁵ to 10¹⁸ atoms/cm³, and an n−/p− material with a doping concentration 5 to 100 times heavier than the concentration of an n−−/p−− material.

A dielectric layer 25 is formed on the top surface of the substrate 20. The dielectric layer 25 may include silicon oxide, silicon nitride, silicon oxynitride, a high-k dielectric material, combinations thereof, or multi-layers thereof. The high-k dielectric material may comprise TiO₂, HfZrO, Ta₂O₃, HfSiO₄, ZrO₂, ZrSiO₂, combinations thereof, or other suitable material. The dielectric layer 25 may be formed by atomic layer deposition (ALD) and/or other suitable methods. The dielectric layer 25 may have a thickness between about 100 Å and about 2,500 Å, although different thicknesses may be used.

The gate electrode 24 is formed on the dielectric layer 25 and fully covers the dielectric layer 25. The gate electrode 24 may include a conductive material such as doped polysilicon, a metal, a metal alloy, or the like. A silicide layer (not shown in the drawing) may be formed on the gate electrode by a self-aligned silicide process. In accordance with some embodiments, for an NMOS, the width W1 of the gate electrode is in a range from about 0.35 μm to about 0.4 μm; and for a PMOS, the width W1 of the gate electrode is in a range from about 0.3 μm to about 0.35 μ. However, the width of the gate electrode would vary based on the manufacturing process.

Referring to FIG. 2B, a lightly doped region 21 is formed at one side within the substrate 20. In some embodiments, the lightly doped region 21 is formed at one side within a well region of the substrate 20. The lightly doped region 21 may be formed by performing an ion implantation process with a tilting angle of from about 30 to about 45 degrees known in the art. In some embodiments, the MOSFET shown in FIG. 2B is an NMOS device, therefore N-type dopants such as phosphorus with energy ranging from about 80 KeV to about 90 KeV may be used to form the lightly doped region 21. In other embodiments, for a PMOS device (not illustrated), P-type dopants such as boron may be used to form the lightly doped region 21.

Referring to FIG. 2C, the spacers 26 a, 26 b are formed on the substrate 20. The spacer 26 a is formed at one side of the gate electrode 24 and in contact with a coplanar surface defined by lateral surfaces of the gate electrode 24 and the dielectric layer 25. The spacer 26 b is at an opposing side of the gate electrode 24 and in contact with a coplanar surface defined by lateral surfaces of the gate electrode 24 and the dielectric layer 25. The spacers 26 a, 26 b are made of a dielectric material, such as silicon oxide, silicon oxynitride (SiON), or silicon nitride (SiN). In some embodiments, the spacers 26 a, 26 b are formed by deposition process such as a plasma-enhanced chemical vapor deposition (PECVD) process. Other applicable deposition processes may also be used. In some embodiments, a ratio of the width W1 of the gate electrode 24 to the width W2 of the spacer 26 a or 26 b is in a range from about 4:1 to about 7:1.

Referring to FIG. 2D, the first drain region 22 a is formed within the lightly doped region 21 by an ion implantation operation. In some embodiments, the ion implantation for the first drain region 22 a is performed with no tilting angle. The conductivity type of the first drain region is the same as that of the lightly doped region 21. The first drain region 22 a has a junction depth d1 measured from a top surface of the substrate 20. In some embodiments, the junction depth d1 is in a range from about 0.01 μm to about 0.022 μm. In some embodiments, the first drain region 22 a may include arsenic with energy in a range from about 10 KeV to about 30 KeV. During implanting the first drain region 22 a, dopants of the first drain region 22 a diffuse laterally into the region of the substrate 20 under the spacer 26 a and the dielectric layer 25. Therefore, the dielectric layer 25 overlaps with a part of the first drain region 22 a. The overlap of the dielectric layer 25 and the first drain region 22 a is about 0.3 μm.

The first source region 23 a is formed within the substrate 20 by implanting ions. The conductivity type of the first source region 23 a is the same as that of the first drain region 22 a. The first source region 23 a has a junction depth d3 measured from a top surface of the substrate 20. In some embodiments, the junction depth d3 is in a range from about 0.01 μm to about 0.022 μm. In some embodiments, the first source region 23 a may include arsenic with energy in a range from about 10 KeV to about 30 KeV. During implanting the first source region 23 a, dopants of the first source region 23 a diffuse laterally into the region of the substrate 20 under the spacer 26 b and the dielectric layer 25. Therefore, the dielectric layer 25 overlaps with a part of the first source region 23 a. The overlap of the dielectric layer 25 and the first source region 23 a is about 0.3 μm.

Referring to FIG. 2E, the second drain region 22 b is formed within the lightly doped region 21 by another ion implantation operation. The conductivity type of the second drain region 22 b is the same as that of the first drain region 22 a. The second drain region 22 b has a junction depth d2 measured from a top surface of the substrate 20. The junction depth d2 is larger than the junction depth d1. In some embodiments, the junction depth d2 is in a range from about 0.02 μm to about 0.054 μm. In some embodiments, the dopant in the second drain region 22 b is different from that in the first drain region 22 a. The second drain region 22 b may include phosphorous implanted with energy in a range from about 20 KeV to about 40 KeV. During implanting the second drain region 22 b, dopants of the second drain region 22 b diffuse laterally into the region of the substrate 20 under the spacer 26 a and the dielectric layer 25. Therefore, the dielectric layer 25 overlaps with a part of the second drain region 22 b. The overlap of the dielectric layer 25 and the second drain region 22 b is about 0.3 μm.

The second source region 23 b is formed within the substrate 20 by implanting ions. The conductivity type of the second source region 23 b is the same as that of the first source region 23 a. The second source region 23 b has a junction depth d4 measured from a top surface of the substrate 20. The junction depth d4 is larger than the junction depth d3. In some embodiments, the junction depth d4 is in a range from about 0.02 μm to about 0.054 μm. In some embodiments, the dopant in the second source region 23 b is different from that in the first source region 23 a. The second source region 23 b may include phosphorous implanted with energy in a range from about 20 KeV to about 40 KeV. During implanting the second source region 23 b, dopants of the second source region 23 b diffuse laterally into the region of the substrate 20 under spacer 26 b and the dielectric layer 25. Therefore, the dielectric layer 25 overlaps with a part of the second source region 23 b. The overlap of the dielectric layer 25 and the second source region 23 b is about 0.3 μm. A rapid thermal annealing (RTA) operation can be employed to foster the lateral diffusion. In some embodiments, the RTA is performed to anneal the first drain region 22 a, the second drain region 22 b, the first source region 23 a and the second source region 23 b. In some embodiments, the RTA process is performed for about 1010˜1020 degrees Celsius and 10 seconds to facilitate the lateral diffusion of the dopants especially in the first source region 23 a and the second source region 23 b.

As mentioned above, in some embodiments, in order to avoid the offset gate issue, the lightly doped region would be implanted at both side (i.e., the drain side or the source side) of the substrate, resulting in the increased width of the gate electrode. To resolve this problem, some embodiments would replace the lightly doped region at the source side by a core lightly doped region (i.e., the lightly doped region plus a pocket implant at a core region, as opposed to an I/O region). However, this additional pocket implant is designed for mitigating device punch-through but would generate a higher threshold voltage due to the heavily doped nature. The present disclosure provides an asymmetric lightly doped structure with only one side of the well region possessing a lightly doped region, according to some embodiments. The offset gate issue can be circumvented by employing a suitable RTA and a suitable gate spacer width such that dopants in the source or drain whichever without lightly doped region can be properly diffused toward the region under gate electrode and reside beneath the gate oxide.

In accordance with the embodiments shown in FIGS. 2A-2E of the present disclosure, since the width of the spacers 26 a, 26 b and the condition (i.e., the energy, concentration, species and doping depth) for implanting the first drain region 22 a, the second drain region 22 b, the first source region 23 a, the second source region 23 b are optimized, it is ensured that the dopants from both of the source region and the drain region would diffuse under the gate electrode to prevent the MOSFET from offset gate issue. Therefore, it is unnecessary to form the lightly doped regions at both of the drain side and the source side. Therefore, in comparison with the MOSFET with the lightly doped regions at both of the drain side and the source side, the MOSFET shown in FIG. 2E has narrower width of the gate electrode 24. The channel length of a MOSFET is defined by the width of the gate electrode 24, and thus reducing the width of the gate electrode 24 would reduce the channel length of the MOSFET. In some embodiments, the channel of the MOSFET is about 58% to 66% less than that of the conventional MOSFET (for an NMOS), and the channel of the MOSFET is about 60% to 70% less than that of the conventional MOSFET (for a PMOS). Reducing the channel length of a MOSFET would reduce the turn on resistance (Ron) and the gate charge, which would in turn increase the performance of the MOSFET.

The process shown in FIGS. 2A-2E is merely illustrative and is not limiting. There may be other variations of the process steps, and the process steps may be performed in different sequences. Other process steps may follow after the process shown in FIGS. 2A-2E.

In view of the above, in some embodiments, a MOSFET with lower turn on resistance is provided by reducing the channel length of a MOSFET, which would in turn to increase the performance of the MOSFET.

In accordance with an embodiment, a semiconductor device comprises a well region, a first doped region, a drain region, a source region and a gate electrode. The first doped region of a first conductivity type is located at a first side within the well region. The drain region of the first conductivity type is within the first doped region. The source region of the first conductivity type is at a second side within the well region, wherein the second side being opposite to the first side. The gate electrode is over the well region and between the source region and the drain region. A surface of the drain region and a surface of the source region define a channel and the surface of the source region directly contacts the well region.

In accordance with another embodiment, a semiconductor device comprises a well region, a lightly doped region, a drain region, a source region, a gate electrode and spacers. The lightly doped region of a first conductivity type is located at a first side within the well region. The drain region of the first conductivity type is within the lightly doped region. The source region of the first conductivity type is at a second side within the well region, wherein the second side being opposite to the first side. The gate electrode is over the well region and between the source region and the drain region. The spacers are located at both sides of the gate electrode. A ratio of the width of each spacer to the width of the gate electrode is in a range from about 1:4 to about 1:7.

In accordance with another embodiment, a method of manufacturing a semiconductor device comprises forming a well region, implanting a lightly doped region in a first side of the well region, implanting a first drain region in the lightly doped region by a first depth, implanting a second drain region in the lightly doped region by a second depth, implanting a source region in a second side of the well region, the second side being opposite to the first side, and forming a gate electrode over the well region. The second depth is greater than the first depth.

The foregoing outlines features of several embodiments so that persons having ordinary skill in the art may better understand the aspects of the present disclosure. Persons having ordinary skill in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other devices or circuits for carrying out the same purposes or achieving the same advantages of the embodiments introduced therein. Persons having ordinary skill in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions and alternations herein without departing from the spirit and scope of the present disclosure. 

What is claimed is:
 1. A method of manufacturing a semiconductor structure, comprising: forming a well; forming a gate electrode over the well; implanting a lightly doped region in a first side of the well; implanting a first drain in the lightly doped region by a first depth; implanting a second drain in the lightly doped region by a second depth, wherein the second depth is greater than the first depth; implanting a source in a second side of the well, the second side being opposite to the first side; and wherein the gate electrode is formed to cover a part of the lightly doped region and a part of the first drain.
 2. The method of claim 1, wherein implanting the source further comprising: implanting a first source in the well by the first depth; and implanting a second source in the lightly doped region by the second depth, wherein the first depth is in a range from about 0.01 μm to about 0.022 μm; and the second depth is in a range from about 0.02 μm to about 0.054 μm.
 3. The method of claim 2, wherein the first source and the first drain are implanted using an energy in a range from 10 KeV to about 30 KeV.
 4. The method of claim 2, wherein the second source and the second drain are implanted using an energy in a range from about 20 KeV to about 40 KeV.
 5. The method of claim 2, further comprising applying an annealing operation to the semiconductor structure in about 10 seconds after implanting the first source, the first drain, the second source and the second drain.
 6. The method of claim 1, further comprising forming spacers at both sides of the gate electrode prior to the implanting the first drain, wherein a ratio of the width of each spacer to the width of the gate electrode is in a range from about 1:4 to about 1:7.
 7. A method of manufacturing a semiconductor structure, comprising: forming a well; forming a gate electrode over the well; implanting a first doped region of a first conductivity type in a first side of the well; and implanting a drain of the first conductivity type in the first doped region, wherein a dopant concentration of the drain is greater than a dopant concentration of the first doped region; wherein the gate electrode is formed to cover the first doped region and the drain.
 8. The method of claim 7, further comprising forming spacers at both sides of the gate electrode prior to implanting the drain, wherein a ratio of the width of each spacer to the width of the gate electrode is in a range from about 1:4 to about 1:7.
 9. The method of claim 7, further comprising applying an annealing operation to the semiconductor structure in about 10 seconds after implanting the drain.
 10. The method of claim 9, wherein the annealing operation comprises a rapid thermal anneal (RTA) between about 1010 to 1020 degrees Celsius.
 11. The method of claim 9, wherein the annealing operation is configured to laterally diffuse the drain until overlapping with the gate electrode for about 0.3 μm.
 12. The method of claim 7, wherein the drain is implanted using an energy in a range from 10 KeV to about 30 KeV.
 13. The method of claim 7, further comprising implanting a source of the first conductivity type in a second side of the well simultaneously with implanting the drain of the first conductivity type in the first doped region, the second side being opposite to the first side.
 14. A method of manufacturing a semiconductor structure, comprising: forming a well; forming a gate electrode over the well; implanting a first doped region of a first conductivity type in a first side of the well; implanting a drain of the first conductivity type in the first doped region, wherein a dopant concentration of the drain is greater than a dopant concentration of the first doped region; and implanting a source of the first conductivity type in a second side of the well, the second side being opposite to the first side, the source having a substantially vertical boundary facing the drain, an entirety of the substantially vertical boundary of the source directly interfacing with the well, wherein the gate electrode covers the first doped region and the drain.
 15. The method of claim 14, wherein implanting the drain in the first doped region and implanting the source in the second side of the well are performed simultaneously.
 16. The method of claim 15, further comprising applying an annealing operation to the semiconductor structure in about 10 seconds after implanting the source and the drain.
 17. The method of claim 16, wherein the annealing operation is configured to laterally diffuse the drain and the source until each overlapping with the gate electrode for about 0.3 μm.
 18. The method of claim 16, wherein the annealing operation comprises a rapid thermal anneal (RTA) between about 1010 to 1020 degrees Celsius.
 19. The method of claim 14, further comprising forming spacers at both sides of the gate electrode prior to implanting the drain and the source, wherein a ratio of the width of each spacer to the width of the gate electrode is in a range from about 1:4 to about 1:7.
 20. The method of claim 19, wherein the source and the drain are implanted after forming the spacers and using an implant energy in a range from 10 KeV to about 40 KeV. 